Electronic states due to surface doping: Si(111)√3×√3-B

Publication information:

Kaxiras E, Pandey K, Himpsel FJ, Tromp R. Electronic states due to surface doping: Si(111)√3×√3-B. Phys. Rev. B. 1990;41:1262–1265. doi:10.1103/PhysRevB.41.1262
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